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Ionizing Radiation Effects in MOS Oxides - Timothy-R Oldham

PRIX: GRATUIT
FORMAT: PDF EPUB MOBI
DATE DE SORTIE: 02/03/2000
TAILLE DU FICHIER: 8,80
ISBN: 981-02-3326-4
LANGUE: FRANÇAIS
AUTEUR: Timothy-R Oldham

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Description:

This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

... other formats Total Ionizing Dose Effects in MOS Oxides and Devices T ... Total-ionizing-dose effects on isolation oxides in modern ... ... . R. Oldham', Fellow, IEEE and F. B. McLean,^ Fe//ow, IEEE I. Introduction The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, th ... Ionizing Radiation Effects in MOS Oxides | International ... ... . While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are ... A microscopic model of radiation-induced defects in SiC MOS devices is still missing and further investigation is necessary [1]. In this work, we performed comparative investigations of ionizing radiation and hot carrier effects in SiC and Si MOS devices. We will report on experiments involving interface and oxide trap generation in the oxide ... The effects of concurrent high-frequency alternating-current (ac) bias annealing of radiation-induced defects in metal-oxide semiconductor (MOS) capacitors has been investigated to evaluate whether this is an acceptable process to extend the lifetime of electronic devices exposed to radiation fields by mitigating the harmful effects of radiation on electronic components. Ionizing Radiation Effects on CMOS Imagers Manufactured in Deep Submicron Process Vincent Goiffona, Pierre Magnana, Fr´ed´eric Bernardb, Guy Rollandb, Olivier Saint-P´ec, Nicolas Hugera and Franck Corbi`erea aUniversit´e de Toulouse, ISAE, 10 avenue E. Belin, 31055, Toulouse, France; bCNES, 18 avenue E. Belin, 31401, Toulouse, France; cEADS Astrium, 31 avenue des cosmonautes, 31402 ... The creation of interface states Dit by ionizing radiation is investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm. A comparison of the thickness dependence in etchback and asgrown oxides supports the idea that the number of defects at the Si-SiO2 interface increases with oxidation time. For relatively thin oxides (tox<12 nm), the rate of increase in Dit is ......